10x 3I306M Militär Ga-As Schalttunnel Diode NEU, NOS Menge 10 Stck.
6,85 €
Lot of 10pcs 3И306М/3I306M ex-USSR Military Gallium-Arsenide Tunnel Diode. Tunnel Diode is made in USSR. Are intended for application in switching device. Forward current switching mode, IFS, mA. Peak point current, Ip, mA.
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