KPS104B Menge 2 Silizium Low Power FET Transistor N-Kanal GOLD Pins КПС104Б USSR
5,60 €
The type of device is indicated on the case. • Transistor structure: dual, with a p-n junction and an n-channel;. • Input capacitance of the transistor - capacitance between the gate and source: no more than 4.5 pF;.
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