Studies on structural and dielectric properties of ¿-Ga2O3 thin films | Lee
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In this study we report on structural and electric properties of ¿-Ga2O3 on Si and GaN substrates. Since Ga2O3 has a band-gap of 4.8 eV at room temperature and a dielectric constant of 10.2~14.2, Ga2O3 can be a potential candidate dielectrics for MIS devices.
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